Products

 

Our benchmark setting products include Schottky Barrier Diodes (SBD) and Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for power system applications.  Our products enable high temperature operation, high reliability, and cost effective solutions at efficiency levels beyond what silicon can achieve.  Global Power Device (GPD) offers discrete Silicon Carbide (SiC) power devices in industry standard packages to the commercial market and in die form for specialized requirements. By virtue of having the industry's state-of-the-art SiC processing capability for both 100 mm and 150 mm SiC wafers, GPD is uniquely equipped for the development of advanced SiC devices rated up to 12 KV.



For more detail information, please contact Global Power Device









For detail information, please contact GPD directly


For detail information, please contact GPD directly