Global Power Device Company (GPD) is a portfolio company of the Global Opportunities Fund (GOF), which is a venture fund uniquely focused on the application of wide bandgap materials technology for the development of high frequency, high temperature, and efficient power semiconductor devices.

Formed in 2007, GOF has incubated a number of companies.  These companies were strategically planned, incubated, and supported to turn ground-breaking Silicon Carbide (SiC) technologies and research into products for the commercial Power and Energy market. The companies form a strategic and synergistic, vertically integrated value chain of SiC technologies.  Under this structure, SiC technology is expected to be fully and economically deployed to meet the market pull by the industry segments which desperately seeks power system efficiency improvements.




Our CEO and member of the board of directors, has 25 years of experience in the high technology industry as entrepreneur, general manager, and strategist. Previously, he founded an optical subsystem venture after designing, developing, and producing high speed fiber-optic subsystems that are in the field today.  He was a general manager and founder of the transponder business unit at one of the leading communications companies in the world.  He was previously at AT&T Bell Laboratories and a principal of the Technology Planning and Ventures Group where he was responsible for bringing technologies from Bell Labs into the commercial market.   At Bell Labs, he led the R&D activities in the semiconductor communication laser technologies where he worked with advanced material and technologies. He has BSEE, MS, and  PhD degrees from the California Institute of Technology (Caltech) and an MBA from Purdue University.


Founder of NASDAQ listed company that is a leading supplier of laser-optic, optics, components, electro-optical products, and radiation detection. He has also served as Director of Research & Development for Essex International, Inc. and as a researcher at AT&T Bell Laboratories.


Board member of good standing at other companies and was the Senior Vice President and General Manager at major communications and storage semiconductor NASDAQ listed companies. He brings over 25 years of experience in the technology industry including engineering, marketing, sales, general management, and mergers and acquisitions. 


Global Power Device Company (GPD) has assembled a team of the world's foremost experts in SiC materials processing, SiC epitaxy, and SiC power device development. The team brings over 200 years of combined experience in the areas of wide bandgap materials, semiconductors, and packaging.


The General Manager of GPD’s operations and technology is a technology veteran with over 30 years of hands-on experience with high bandgap materials such as diamond and SiC, semiconductors, engineering, and operations. Most recently he set up and brought into operation a SiC device facility. Earlier, he brought polycrystalline-diamond technology into production, brought up an Aluminum Nitride packaging business, and increased revenues 30X. He successfully developed over $30M in DARPA contracts, holds six US patents, and has published 50 peer-reviewed journal articles. He has a BS degree in Chemistry from Michigan State University and a PhD in Chemistry from the California Institute of Technology.

CHIEF TECHNOLOGIST - SiC Materials and Process

The Chief Technologist at GPD has over 30 years of experience in R&D, New Product Introduction, Manufacturing and Operations, and Strategic Planning in SiC, Si, InP, GaAs, and other advanced materials technology. He was previously a General Manager for a SiC Substrate Business, and responsible for R&D, Manufacturing, and Operations at a major technology company that is listed on the NASDAQ. Previously, he was the Chief Technology Officer of a Compound Semiconductor business, Director of R&D on Advanced Process Development, and a Distinguished Member of Technical Staff at AT&T Bell Laboratories. He has over 25 patents and has published over 90 articles on Semiconductor technologies in peer-reviewed journals. He has a BSEE from the Indian Institute of technology and a MS and PhD from the Indian Institute of Science.



SiC epitaxy is a critical step in SiC device processing and GPD’s Director of SiC Epitaxy Processing has over 20 years of experience in SiC and III-V growth and characterization. Previously, he was responsible for Global Applications Engineering and was a Senior SiC Epitaxy Specialist at a major wide band gap and SiC materials processing company. He has established and enabled SiC epitaxial capability with chlorosilane chemistry.  He has also developed and implemented 100 mm and >50 um (5 KV) SiC epitaxy processes. Early in his career he was a SiC Epi Scientist at a leading defense contractor. He served as a SEMI member where he led the SiC group and also served on the ICSCRM 2011 Organizing Committee member. He has over 60 articles on SiC published in peer-reviewed journals. He has a BS from Worcester Institute of Technology and a PhD in Physics from the University of Pittsburgh.



Our SiC process technologist is an expert in wide band gap materials processing and SiC semiconductor processing and technologies. He has over 25 years of experience in materials process development in SiC, ceramics, thermoelectric materials, and semiconductors. Such experience includes the development and fabrication of SiC devices and also reliability testing and production qualification of such devices. Previously, he developed and brought to manufacturing in-core nuclear direct energy conversion technologies. He has a BS in Ceramic Engineering from the University of Illinois, Urbana-Champaign and a PhD in Materials from Northwestern University.